| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
3SK309 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 1682 |
3SK30A |
Silicon N-Channel MOS FET, intended for use in FM/AM RF AMP. and Mixer |
Hitachi Semiconductor |
| 1683 |
3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
Hitachi Semiconductor |
| 1684 |
3SK317 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 1685 |
3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
Hitachi Semiconductor |
| 1686 |
3SK318 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 1687 |
3SK319 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 1688 |
3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
Hitachi Semiconductor |
| 1689 |
3SK321 |
Silicon N-Channel Dual Gate MOS FET |
Hitachi Semiconductor |
| 1690 |
3SK322 |
Silicon N-Channel Dual Gate MOS FET |
Hitachi Semiconductor |
| 1691 |
3SK35 |
Silicon N-Channel Dual gate MOS field effect transistor, TV, VHF and FM Tuner Amplifier, Mix Applications |
TOSHIBA |
| 1692 |
3SK38A |
Silicon N-Channel MOS field effect transistor, chopper circuit applications |
TOSHIBA |
| 1693 |
3SK87 |
N-Channel Silicon Dual-Gate MOS Field Effect Transistor |
NEC |
| 1694 |
3SK88 |
N-Channel Silicon Dual-Gate MOS Field Effect Transistor |
NEC |
| 1695 |
4AJ11 |
Silicon P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 1696 |
4AK26 |
Silicon N-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 1697 |
4AK27 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1698 |
4AM11 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 1699 |
4AM15 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 1700 |
6AM13 |
Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
Hitachi Semiconductor |
| 1701 |
6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 1702 |
6AM15 |
Silicon N/P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 1703 |
APPLICATION-NOTE |
4V Gate-Driven Power MOS FET With Low drain to source ON-STATE Resistance Application Note |
NEC |
| 1704 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1705 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1706 |
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1707 |
BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1708 |
BB301 |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 1709 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 1710 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
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