No. |
Part Name |
Description |
Manufacturer |
1681 |
ISO7342FCDWR |
Robust EMC, Low Power, Quad-Channel 2/2 Digital Isolator, Fail-Safe Low 16-SOIC -40 to 125 |
Texas Instruments |
1682 |
ISO7342FCQDWQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
1683 |
ISO7342FCQDWRQ1 |
Automotive, Low Power, Quad-Channel 2/2 Digital Isolator 16-SOIC -40 to 125 |
Texas Instruments |
1684 |
K02C |
2 Lead TO-3 Metal Can Package, Low Profile |
National Semiconductor |
1685 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1686 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1687 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1688 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1689 |
K4E661612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1690 |
K4E661612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1691 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1692 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1693 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1694 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1695 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1696 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1697 |
K4F661612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1698 |
K4F661612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1699 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1700 |
K4F661612C-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1701 |
K4F661612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1702 |
KA04B |
4 Lead TO-3 Metal Can Package, Low Profile |
National Semiconductor |
1703 |
KM416V4000BS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1704 |
KM416V4000BS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1705 |
KM416V4000BS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1706 |
KM416V4000CS-L45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
1707 |
KM416V4000CS-L5 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1708 |
KM416V4000CS-L6 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
1709 |
KM416V4004BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
1710 |
KM416V4004BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| | | |