| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
JANTX1N5542C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1682 |
JANTX1N752C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1683 |
JANTXV1N3022C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1684 |
JANTXV1N3032C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1685 |
JANTXV1N3042C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1686 |
JANTXV1N3822C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1687 |
JANTXV1N4102C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1688 |
JANTXV1N4112C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1689 |
JANTXV1N4122C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1690 |
JANTXV1N4372C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1691 |
JANTXV1N4622C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1692 |
JANTXV1N5522C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1693 |
JANTXV1N5532C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1694 |
JANTXV1N5542C-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1695 |
JANTXV1N752C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 1696 |
JTS3702C-1AA5 |
Micropower dual CMOS voltage comparator |
ST Microelectronics |
| 1697 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1698 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1699 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1700 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1701 |
K4E640812C-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1702 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1703 |
K4E640812C-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1704 |
K4E640812C-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1705 |
K4E640812C-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1706 |
K4E640812C-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1707 |
K4E640812C-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1708 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1709 |
K4E641612C-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 1710 |
K4E641612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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