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Datasheets for 500W

Datasheets found :: 3339
Page: | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 |
No. Part Name Description Manufacturer
1681 LCE7.5 Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1682 LCE7.5A Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1683 LCE8.0 Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1684 LCE8.0A Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1685 LCE8.5 Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1686 LCE8.5A Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1687 LCE9.0 Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1688 LCE9.0A Low Capacitance TRANSZORB Transient Voltage Suppressors Peak Pulse Power 1500W Vishay
1689 MIC49500WR Power Management- Linear Regulators Microchip
1690 MIC49500WR-TR Power Management- Linear Regulators Microchip
1691 MJ10050 NPN Silicon Power Darlington transistor 500W 850V 50A Motorola
1692 MJ10051 NPN Silicon Power Darlington transistor 500W 750V 50A Motorola
1693 MJ10052 NPN Silicon Power Darlington transistor 500W 750V 50A Motorola
1694 MJ10100 NPN Silicon Power Darlington transistor 500W 450V 100A Motorola
1695 MJ10101 NPN Silicon Power Darlington transistor 500W 350V 100A Motorola
1696 MJ10102 NPN Silicon Power Darlington transistor 500W 450V 100A Motorola
1697 MJ10200 NPN Silicon Power Darlington transistor 500W 250V 200A Motorola
1698 MJ10201 NPN Silicon Power Darlington transistor 500W 200V 200A Motorola
1699 MJ10202 NPN Silicon Power Darlington transistor 500W 250V 200A Motorola
1700 MJE170 12.500W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1701 MJE171 12.500W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1702 MJE172 12.500W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1703 MJE180 12.500W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1704 MJE181 12.500W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1705 MJE182 12.500W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
1706 NTE5011T1 Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 5.6V, Zener test current Izt = 5mA. NTE Electronics
1707 NTE5013T1 Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 6.2V, Zener test current Izt = 5mA. NTE Electronics
1708 NTE5019T1 Zener diode, 500watt, +-1 % tolerance. Nominal zener voltage Vz = 10.0V, Zener test current Izt = 5mA. NTE Electronics
1709 OP500W NPN silicon phototransistor. Optek Technology
1710 P5KE10 Diode TVS Single Uni-Dir 10V 500W 2-Pin DO-41 New Jersey Semiconductor


Datasheets found :: 3339
Page: | 53 | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 |



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