| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1682 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1683 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1684 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 1685 |
2N6261 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1686 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1687 |
2N6263 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1688 |
2N6264 |
General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1689 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1690 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1691 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1692 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1693 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
| 1694 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
| 1695 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1696 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1697 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 1698 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 1699 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1700 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1701 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 1702 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
| 1703 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1704 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1705 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1706 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1707 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1708 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1709 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 1710 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
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