| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
KM48C8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 45ns |
Samsung Electronic |
| 1682 |
KM48C8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns |
Samsung Electronic |
| 1683 |
KM48C8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns |
Samsung Electronic |
| 1684 |
KM48V2000BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1685 |
KM48V2000BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1686 |
KM48V2000BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 1687 |
KM48V2100BS-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 1688 |
KM48V2100BS-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 1689 |
KM48V2100BS-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
| 1690 |
KM48V8004BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1691 |
KM48V8004BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1692 |
KM48V8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1693 |
KM48V8104BS-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
| 1694 |
KM48V8104BS-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 1695 |
KM48V8104BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 1696 |
LC3564BS-10 |
64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins |
SANYO |
| 1697 |
LC3564BS-70 |
64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control Pins |
SANYO |
| 1698 |
LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications |
NEC |
| 1699 |
LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications |
NEC |
| 1700 |
LH532100BS-1 |
CMOS 2M(256K x 8) Mask-Programmable ROM |
SHARP |
| 1701 |
LP61L256BS-12 |
32K X 8 Bit High SPEED LOW VCC CMOS SRAM |
AMIC Technology |
| 1702 |
MAX2205EBS-T |
RF Power Detectors in UCSP |
MAXIM - Dallas Semiconductor |
| 1703 |
MAX2205EBS-T10 |
RF Power Detectors in UCSP |
MAXIM - Dallas Semiconductor |
| 1704 |
MAX2206EBS-T |
RF Power Detectors in UCSP |
MAXIM - Dallas Semiconductor |
| 1705 |
MAX2207EBS-T |
RF Power Detectors in UCSP |
MAXIM - Dallas Semiconductor |
| 1706 |
MAX2208EBS-T |
RF Power Detectors in UCSP |
MAXIM - Dallas Semiconductor |
| 1707 |
MAX3202EEBS-T |
Low-Capacitance, 2/3/4/6-Channel, ��15kV ESD Protection Arrays for High-Speed Data Interfaces |
MAXIM - Dallas Semiconductor |
| 1708 |
MAX9810AEBS-T |
Electret condenser microphone cartridge preamplifier |
MAXIM - Dallas Semiconductor |
| 1709 |
MAX9810BEBS-T |
Electret condenser microphone cartridge preamplifier |
MAXIM - Dallas Semiconductor |
| 1710 |
MAX9810CEBS-T |
Electret condenser microphone cartridge preamplifier |
MAXIM - Dallas Semiconductor |
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