| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1682 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1683 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1684 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 1685 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1686 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1687 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1688 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1689 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 1690 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 1691 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 1692 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 1693 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
| 1694 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 1695 |
2N1842A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1696 |
2N1843A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1697 |
2N1844A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1698 |
2N1845A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1699 |
2N1846A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1700 |
2N1847A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1701 |
2N1848A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1702 |
2N1849A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1703 |
2N1850A |
Industrial-type, silicon controlled rectifier in a stud package with current handling capability to 16A at junction temperature to 125°C |
Motorola |
| 1704 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1705 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1706 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1707 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1708 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 1709 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 1710 |
2N2193AS |
NPN silicon annular transistor for high-current switching and amplifier applications |
Motorola |
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