| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
2N7002LT1 |
60 V, N-channel enhancement |
TRANSYS Electronics Limited |
| 1682 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 1683 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 1684 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 1685 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 1686 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 1687 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 1688 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 1689 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 1690 |
2SA1664 |
SOT-89 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 1691 |
2SA935 |
TO-92L Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 1692 |
2SC1674 |
TO-92 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 1693 |
2SC3198 |
TO-92 Plastic Package Transistors (NPN) |
Continental Device India Limited |
| 1694 |
2SD1899 |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 1695 |
2SD1899-Z |
TO-252 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 1696 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1697 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1698 |
3EZ120 |
120 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1699 |
3EZ130 |
130 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1700 |
3EZ140 |
140 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1701 |
3EZ150 |
150 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1702 |
3EZ160 |
160 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1703 |
3EZ170 |
170 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1704 |
3EZ180 |
180 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1705 |
3EZ190 |
190 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1706 |
3EZ200 |
200 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 1707 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 1708 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 1709 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1710 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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