| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
RF2494PCBA-H |
High frequency LNA/ mixer |
RF Micro Devices |
| 1682 |
RM20C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1683 |
RM20CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1684 |
RM20CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1685 |
RM20DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1686 |
RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1687 |
RM300CA-9W |
FAST RECOVERY DIODE MODULES HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1688 |
RM50C1A-XXS |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1689 |
RM50CA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1690 |
RM50CA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1691 |
RM50DA |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1692 |
RM50DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 1693 |
RN142S |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1694 |
RN731V |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1695 |
RN739F |
Diodes > High Frequency Diodes > PIN diodes |
ROHM |
| 1696 |
SB110 |
100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication |
Diodes |
| 1697 |
SBA120-18J |
Dual 180 V, 12 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 1698 |
SBM560 |
60V; 5A surface mount schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
Diodes |
| 1699 |
SBR100-10J |
Dual 100 V, 10 A Schottky Barrier Diode for High Frequency Rectification |
ON Semiconductor |
| 1700 |
SE5539 |
High frequency operational amplifier |
Philips |
| 1701 |
SE5539F |
High frequency operational amplifier |
Philips |
| 1702 |
SE5539N |
High frequency operational amplifier |
Philips |
| 1703 |
SFT226 |
Germanium High Frequency Transistor |
COSEM |
| 1704 |
SFT227 |
Germanium High Frequency Transistor |
COSEM |
| 1705 |
SFT228 |
Germanium High Frequency Transistor |
COSEM |
| 1706 |
SFT229 |
Germanium High Frequency Transistor |
COSEM |
| 1707 |
SFT288 |
Germanium High Frequency Transistor |
COSEM |
| 1708 |
SFT298 |
Germanium High Frequency Transistor |
COSEM |
| 1709 |
SFT315 |
Germanium High Frequency Transistor |
COSEM |
| 1710 |
SFT357P |
Germanium High Frequency Transistor |
COSEM |
| | | |
