| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
2SA1241 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1682 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 1683 |
2SA1243 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
| 1684 |
2SA1244 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
| 1685 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1686 |
2SA1255 |
Transistor Silicon PNP Triple Diffused (PCT process) High Voltage Switching Applications |
TOSHIBA |
| 1687 |
2SA1263 |
SILICON PNP TRIPLE DIFFUSED TYPE |
TOSHIBA |
| 1688 |
2SA1264 |
SILICON PNP TRIPLE DIFFUSED TYPE |
TOSHIBA |
| 1689 |
2SA1265 |
Power Amplifier Applications |
TOSHIBA |
| 1690 |
2SA127 |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 1691 |
2SA1279 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1692 |
2SA128 |
High-Speed Switching Transistor |
TOSHIBA |
| 1693 |
2SA129 |
High-Speed Switching Transistor |
TOSHIBA |
| 1694 |
2SA1293 |
TRANSISTOR SILICON PNP PITAXIAL TYPE (PCT PROCESS) High Current Switching Applications |
TOSHIBA |
| 1695 |
2SA1296 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1696 |
2SA1297 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1697 |
2SA1298 |
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications |
TOSHIBA |
| 1698 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 1699 |
2SA1301 |
Silicon PNP triple diffused power transistor |
TOSHIBA |
| 1700 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 1701 |
2SA1304 |
TRANSISTOR (POWER AMPLIFIER/ VERTICAL OUTPUT APPLICATIONS) |
TOSHIBA |
| 1702 |
2SA1305 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
| 1703 |
2SA1306 |
Silicon PNP epitaxial power transistor |
TOSHIBA |
| 1704 |
2SA1306 |
TO-220 Package Series |
TOSHIBA |
| 1705 |
2SA1306A |
Silicon PNP epitaxial power transistor |
TOSHIBA |
| 1706 |
2SA1306B |
Silicon PNP epitaxial power transistor |
TOSHIBA |
| 1707 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 1708 |
2SA1307 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1709 |
2SA1308 |
Silicon PNP epitaxial high current switching transistor |
TOSHIBA |
| 1710 |
2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
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