No. |
Part Name |
Description |
Manufacturer |
1681 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1682 |
2N4049 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1683 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1684 |
2N4050 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1685 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1686 |
2N4051 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1687 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1688 |
2N4052 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1689 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
1690 |
2N4053 |
Germanium PNP Power Transistor, TO-36 Package |
Silicon Transistor Corporation |
1691 |
2N4063 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
1692 |
2N4064 |
High-voltage silicon N-P-N planar transistor. |
General Electric Solid State |
1693 |
2N4070 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
1694 |
2N4071 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
1695 |
2N4075 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1696 |
2N4076 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1697 |
2N4115 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1698 |
2N4116 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1699 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1700 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1701 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1702 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1703 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
1704 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
1705 |
2N4150 |
Silicon NPN power transistor, TO-5 package |
Silicon Transistor Corporation |
1706 |
2N4210 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
1707 |
2N4211 |
Silicon NPN Power Transistor, TO-63 package |
Silicon Transistor Corporation |
1708 |
2N4231 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1709 |
2N4231 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
1710 |
2N4231 |
Silicon NPN power transistor, TO-66 package |
Silicon Transistor Corporation |
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