| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
AN1159 |
TIPS TO REDUCE PROGRAM AND ERASE TIMES |
SGS Thomson Microelectronics |
| 1682 |
AN3370 |
Flying-Erase IC |
Panasonic |
| 1683 |
AN3370K |
Flying-Erase IC |
Panasonic |
| 1684 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1685 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1686 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1687 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1688 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1689 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1690 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1691 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1692 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1693 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1694 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1695 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1696 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 1697 |
BA7745 |
VCR Hi-Fi audio signal REC / PB amplifier with flying-erase oscillator |
ROHM |
| 1698 |
BM29F040 |
4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY |
Winbond Electronics |
| 1699 |
BM29F400B |
4 MEGABIT (512K x 8/ 256K x 16) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY |
Winbond Electronics |
| 1700 |
BM29F400T |
4 MEGABIT (512K x 8/ 256K x 16) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY |
Winbond Electronics |
| 1701 |
CAT28F010 |
Bulk Erase Flash Memory, 1Mb |
Catalyst Semiconductor |
| 1702 |
CAT28F010 |
1 Mb Bulk Erase Flash Memory |
ON Semiconductor |
| 1703 |
CAT28F020 |
Bulk Erase Flash Memory, 2Mb |
Catalyst Semiconductor |
| 1704 |
CAT28F512 |
Bulk Erase Flash Memory, 512Kb |
Catalyst Semiconductor |
| 1705 |
HY29F040A |
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory |
Hynix Semiconductor |
| 1706 |
HY29F040AC-12 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 1707 |
HY29F040AC-12E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 1708 |
HY29F040AC-12I |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 120ns |
Hynix Semiconductor |
| 1709 |
HY29F040AC-15 |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
| 1710 |
HY29F040AC-15E |
512K x 8-bit CMOS 5.0 volt-only, sector erase flash memory, 150ns |
Hynix Semiconductor |
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