| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
HN1C01F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1682 |
HN1C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1683 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1684 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1685 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1686 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1687 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1688 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 1689 |
HN3C10FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1690 |
HN3C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1691 |
HN3C12 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1692 |
HN3C14 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1693 |
HN3C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1694 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 1695 |
HN9C01FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1696 |
HN9C01FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1697 |
HN9C09FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1698 |
HN9C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1699 |
HN9C15FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1700 |
HN9C22FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1701 |
IMF6485 |
Dual N-Channel JFET Low Noise Amplifier |
Intersil |
| 1702 |
IMT1AFRA |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1703 |
IMT1AFRAT110 |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1704 |
IMT1AT110 |
PNP+PNP General Purpose Amplification Transistor |
ROHM |
| 1705 |
IMT4FRA |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1706 |
IMT4FRAT110 |
PNP+PNP General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1707 |
IMX1T110 |
NPN+NPN General Purpose Amplification Transistor |
ROHM |
| 1708 |
IMX8FRA |
NPN+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1709 |
IMX8FRAT110 |
NPN+NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 1710 |
IMZ1AT108 |
PNP+NPN General Purpose Amplification Transistor |
ROHM |
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