| No. |
Part Name |
Description |
Manufacturer |
| 1681 |
HERAF1003G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1682 |
HERAF1004G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1683 |
HERAF1005G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1684 |
HERAF1006G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1685 |
HERAF1007G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1686 |
HERAF1008G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1687 |
HN2E04F |
Multi-chip discrete device (PNP + SW diode) |
TOSHIBA |
| 1688 |
HN4C05JU |
Multi Chip Discrete Device Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 1689 |
HN7G01FU |
Multi Chip Discrete Device Power Management Switch Application Driver Circuit Application Interface Circuit Application |
TOSHIBA |
| 1690 |
HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. |
TOSHIBA |
| 1691 |
HS1AL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1692 |
HS1BL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1693 |
HS1DL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1694 |
HS1FL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1695 |
HS1GL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1696 |
HS1JL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1697 |
HS1KL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1698 |
HS1ML |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1699 |
HS3AB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1700 |
HS3BB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1701 |
HS3DB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1702 |
HS3FB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1703 |
HS3GB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1704 |
HS3JB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1705 |
HS3KB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1706 |
HS3MB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1707 |
IRS20124S |
DIGITAL AUDIO DRIVER WITH DISCRETE DEAD-TIME AND PROTECTION |
International Rectifier |
| 1708 |
IRS20124STRPBF |
Digital Audio Driver with Discrete Dead-Time and Protection. High and Low Side Driver in a 14-Lead SOIC package |
International Rectifier |
| 1709 |
KBL601G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| 1710 |
KBL602G |
Discrete Devices -Bridge Rectifier-Standard Bridge |
Taiwan Semiconductor |
| | | |
