No. |
Part Name |
Description |
Manufacturer |
1681 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
1682 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
1683 |
2SC3017 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1684 |
2SC3018 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1685 |
2SC3019 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1686 |
2SC3020 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1687 |
2SC3021 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1688 |
2SC3022 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1689 |
2SC3030 |
TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
1690 |
2SC3043 |
NPN Triple Diffused Planar Type Silicon Transistor |
Unknow |
1691 |
2SC3047 |
TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING |
Fuji Electric |
1692 |
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
1693 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
1694 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
1695 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
1696 |
2SC3075 |
Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications |
TOSHIBA |
1697 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
1698 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
1699 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
1700 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1701 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1702 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1703 |
2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1704 |
2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
1705 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
1706 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
1707 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
1708 |
2SC3122 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF RF Amplifier Applications |
TOSHIBA |
1709 |
2SC3123 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications |
TOSHIBA |
1710 |
2SC3124 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator Applications |
TOSHIBA |
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