| No. |
Part Name |
Description |
Manufacturer |
| 17101 |
IR51H420 |
500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17102 |
IR51HD224 |
250V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17103 |
IR51HD310 |
400V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17104 |
IR51HD420 |
500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17105 |
IR53H420 |
500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17106 |
IR53HD420 |
500V Self-Oscilliating Half-Bridge Hybrid MOSFET and Gate Driver in a 9 Lead SIP w/o #5and8 package |
International Rectifier |
| 17107 |
IRF520 |
N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 17108 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 17109 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 17110 |
IRF530 |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 17111 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 17112 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 17113 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 17114 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 17115 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 17116 |
IRF540 |
N-CHANNEL 100V - 0.065 OHM - 30A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 17117 |
IRF540 |
N-CHANNEL 100V - 0.055 OHM - 22A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 17118 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 17119 |
IRF640-D |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 17120 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 17121 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 17122 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 17123 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 17124 |
IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 17125 |
IRF6678TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 17126 |
IRF6678TRPBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 17127 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 17128 |
IRF820 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 17129 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
| 17130 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
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