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Datasheets found :: 4511
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No. Part Name Description Manufacturer
1711 HP3-ML-AC220V HP-relay. 10 Amp power relay. 3 form C, neon lamp. Coil voltage 220 V AC. Direct mounting (with lamp wired) type. Matsushita Electric Works(Nais)
1712 HP3-ML-AC240V HP-relay. 10 Amp power relay. 3 form C, neon lamp. Coil voltage 240 V AC. Direct mounting (with lamp wired) type. Matsushita Electric Works(Nais)
1713 HP3-ML-DC110V HP-relay. 10 Amp power relay. 3 form C, neon lamp. Coil voltage 110 V DC. Direct mounting (with lamp wired) type. Matsushita Electric Works(Nais)
1714 IH5044CJE General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
1715 IH5044CPE General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
1716 IH5044CWE General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
1717 IH5044C_D General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
1718 IH5044MJE General-purpose CMOS analog switch. Double pole, single throw (DPST) MAXIM - Dallas Semiconductor
1719 IH5045CJE General-purpose CMOS analog switch. Dual, double pole, single throw (Dual DPST) MAXIM - Dallas Semiconductor
1720 IH5045CPE General-purpose CMOS analog switch. Dual, double pole, single throw (Dual DPST) MAXIM - Dallas Semiconductor
1721 IH5045CWE General-purpose CMOS analog switch. Dual, double pole, single throw (Dual DPST) MAXIM - Dallas Semiconductor
1722 IH5045C_D General-purpose CMOS analog switch. Dual, double pole, single throw (Dual DPST) MAXIM - Dallas Semiconductor
1723 IH5045MJE General-purpose CMOS analog switch. Dual, double pole, single throw (Dual DPST) MAXIM - Dallas Semiconductor
1724 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
1725 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
1726 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
1727 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
1728 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
1729 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
1730 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
1731 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
1732 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
1733 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
1734 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
1735 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
1736 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
1737 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
1738 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1739 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
1740 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State


Datasheets found :: 4511
Page: | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 |



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