| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch |
Hitachi Semiconductor |
| 1712 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 1713 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1714 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1715 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1716 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1717 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1718 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1719 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1720 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1721 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1722 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1723 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1724 |
1SS300 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1725 |
1SS301 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1726 |
1SS302 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1727 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 1728 |
1SS307 |
Diode Silicon Epitaxial Planar Type General Puropose Rectifier Applications |
TOSHIBA |
| 1729 |
1SS308 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1730 |
1SS309 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 1731 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 1732 |
1SS314 |
Diode Silicon Epitaxial Planar Type VHF Tuner Band Switch Applications |
TOSHIBA |
| 1733 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1734 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1735 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 1736 |
1SS336 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1737 |
1SS337 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1738 |
1SS344 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1739 |
1SS349 |
Diode Silicon Epitaxial Schottky Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1740 |
1SS352 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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