| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
1N5473C |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1712 |
1N5474A |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1713 |
1N5474B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1714 |
1N5474C |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1715 |
1N5475A |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1716 |
1N5475B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1717 |
1N5475C |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1718 |
1N5476A |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1719 |
1N5476B |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1720 |
1N5476C |
Silicon EPICAP Diode, voltage variable capacitance, 30V |
Motorola |
| 1721 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1722 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1723 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1724 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1725 |
1N5519 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1726 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1727 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1728 |
1N5520 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1729 |
1N5520A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1730 |
1N5520B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1731 |
1N5521 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1732 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1733 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1734 |
1N5521D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 1735 |
1N5522 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1736 |
1N5522A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1737 |
1N5522B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1738 |
1N5523 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1739 |
1N5523A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1740 |
1N5523B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
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