| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 1712 |
2SK609 |
Low Noise Ku-K BAND GaAs FET (This NE71084 datasheet is also the datasheet of 2SK609, see the Electrical Characteristics table) |
NEC |
| 1713 |
2W005G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1714 |
2W01G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1715 |
2W02G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1716 |
2W04G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1717 |
2W06G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1718 |
2W08G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1719 |
2W10G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 1720 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 1721 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 1722 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 1723 |
35PD10M |
The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... |
Anadigics Inc |
| 1724 |
35PD1M-TO |
The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... |
Anadigics Inc |
| 1725 |
37LV128 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo |
Microchip |
| 1726 |
37LV36 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 1727 |
37LV65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m |
Microchip |
| 1728 |
3DNOW AND MMX |
AMD Extensions to the 3DNow! and MMX Instruction Sets Manual |
Advanced Micro Devices |
| 1729 |
3LF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 500V |
TOSHIBA |
| 1730 |
3NF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1000V |
TOSHIBA |
| 1731 |
3QF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1200V |
TOSHIBA |
| 1732 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 1733 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 1734 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 1735 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 1736 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 1737 |
50LF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 800V |
TOSHIBA |
| 1738 |
50NF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1000V |
TOSHIBA |
| 1739 |
50QF11 |
Silicon alloy-diffused junction avalanche rectifier 50A 1200V |
TOSHIBA |
| 1740 |
54F109 |
Dual JK (Note: Overbar Over the K) Positive Edge-Triggered Flip-Flop |
National Semiconductor |
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