No. |
Part Name |
Description |
Manufacturer |
1711 |
AM154 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
1712 |
AM154 |
1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) |
Panjit International Inc |
1713 |
AM154 |
400 V, 1.5 A, silicon miniature single phase bridge |
TRANSYS Electronics Limited |
1714 |
AM154 |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
TRSYS |
1715 |
AM154S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 400 V. |
Comchip Technology |
1716 |
AM156 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
1717 |
AM156 |
1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) |
Panjit International Inc |
1718 |
AM156 |
600 V, 1.5 A, silicon miniature single phase bridge |
TRANSYS Electronics Limited |
1719 |
AM156 |
600 V, 1.5 A, silicon miniature single-phase bridge |
TRSYS |
1720 |
AM156S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. |
Comchip Technology |
1721 |
AM158 |
Silicon Miniature Single-Phase Bridge |
Comchip Technology |
1722 |
AM158 |
1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) |
Panjit International Inc |
1723 |
AM158 |
800 V, 1.5 A, silicon miniature single phase bridge |
TRANSYS Electronics Limited |
1724 |
AM158 |
1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE |
TRSYS |
1725 |
AM158S |
1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. |
Comchip Technology |
1726 |
AM1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
1727 |
AM2023-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1728 |
AM2023-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1729 |
AM2023-006 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1730 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1731 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1732 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
1733 |
AM2729-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1734 |
AM2729-125 |
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
SGS Thomson Microelectronics |
1735 |
AM2931-110 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
1736 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
1737 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
1738 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
1739 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
1740 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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