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Datasheets for ON MI

Datasheets found :: 29656
Page: | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 |
No. Part Name Description Manufacturer
1711 AM154 Silicon Miniature Single-Phase Bridge Comchip Technology
1712 AM154 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) Panjit International Inc
1713 AM154 400 V, 1.5 A, silicon miniature single phase bridge TRANSYS Electronics Limited
1714 AM154 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE TRSYS
1715 AM154S 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 400 V. Comchip Technology
1716 AM156 Silicon Miniature Single-Phase Bridge Comchip Technology
1717 AM156 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) Panjit International Inc
1718 AM156 600 V, 1.5 A, silicon miniature single phase bridge TRANSYS Electronics Limited
1719 AM156 600 V, 1.5 A, silicon miniature single-phase bridge TRSYS
1720 AM156S 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 600 V. Comchip Technology
1721 AM158 Silicon Miniature Single-Phase Bridge Comchip Technology
1722 AM158 1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.5 Amperes) Panjit International Inc
1723 AM158 800 V, 1.5 A, silicon miniature single phase bridge TRANSYS Electronics Limited
1724 AM158 1.0 TO 1.5 AMPERE SILICON MINIATURE SINGLE-PHASE BRIDGE TRSYS
1725 AM158S 1.5 A silicon miniature single-phase bridge. Max recurrent peak reverse voltage 800 V. Comchip Technology
1726 AM1616-050 High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT SGS Thomson Microelectronics
1727 AM2023-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1728 AM2023-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1729 AM2023-006 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1730 AM2327-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1731 AM2327-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1732 AM2327-005 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1733 AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1734 AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
1735 AM2931-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1736 AM2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1737 AM3135-007 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1738 AM3135-014 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1739 AM3135-025 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1740 AM3135-035 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics


Datasheets found :: 29656
Page: | 54 | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 |



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