No. |
Part Name |
Description |
Manufacturer |
1711 |
BSW19 |
Silicon PNP epitaxial planar transistor for high speed switching applications |
AEG-TELEFUNKEN |
1712 |
BSW20 |
Silicon PNP epitaxial planar transistor for high speed switching applications |
AEG-TELEFUNKEN |
1713 |
BSX19 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
1714 |
BSX20 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
1715 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
1716 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
1717 |
BSX80 |
Silicon NPN epitaxial planar transistor for high speed switching applications. Electrically the BSX80 resembles 2N708 |
AEG-TELEFUNKEN |
1718 |
BSX93 |
Transistor for high frequency amplifiers |
SGS-ATES |
1719 |
BSY27 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
1720 |
BSY55 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
1721 |
BSY56 |
Silicon NPN epitaxial planar transistor for high speed switching applications and RF aplifiers |
AEG-TELEFUNKEN |
1722 |
BSY95A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
1723 |
BTH151S-650R |
Thyristor High Repetitive Surge |
Philips |
1724 |
BU111 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
1725 |
BU114 |
NPN Silicon High-Power switching transistor for high operating voltages |
Siemens |
1726 |
BU310 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
1727 |
BU311 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
1728 |
BU312 |
NPN Silicon Power transistor for horiontal deflection output stages |
Siemens |
1729 |
BU406 |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. |
USHA India LTD |
1730 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
1731 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
1732 |
BU407 |
NPN, horizontal deflection transistor for horizontal deflection output stages of TV and SRT. Vceo = 150Vdc, Vcbo = 330Vdc, Vcev = 330Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
1733 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
1734 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
1735 |
BUL45-D |
NPN Silicon Power Transistor High Voltage SWITCHMODE Series |
ON Semiconductor |
1736 |
BUV11N |
NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications |
Motorola |
1737 |
BXY15 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
1738 |
BXY15CA |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
1739 |
BXY15CA1 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
1740 |
BXY15CA2 |
Storage varactors in multimesa structure for high output powers, datasheet in german language |
Siemens |
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