| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
MD918B |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 1712 |
MD918B |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications |
Motorola |
| 1713 |
MD918BF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 1714 |
MD918BF |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 1715 |
MD918F |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 1716 |
MD918F |
Dual NPN silicon annular transistor designed for ultra-high frequency oscillator and amplifier amplifier applications, TO-89 case |
Motorola |
| 1717 |
MFE2000 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1718 |
MFE2001 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1719 |
MFE3004 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1720 |
MFE3005 |
Silicon N-channel MOS field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1721 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 1722 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 1723 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 1724 |
MJD127T4 |
PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 1725 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 1726 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 1727 |
ML2751 |
Power Amplifier and LNA |
Micro Linear |
| 1728 |
ML2751DT |
Power Amplifier and LNA |
Micro Linear |
| 1729 |
MM1139 |
PNP germanium selective metal etch transistor for use in FM mixer and IF amplifier applications |
Motorola |
| 1730 |
MM1549 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1731 |
MM1550 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1732 |
MM1551 |
NPN silicon RF power transistor designed for VHF/UHF amplifier applications, ideal for 225-400MHz communications equipment |
Motorola |
| 1733 |
MM1812 |
NPN silicon transistor designed for audio power amplifier applications up to 1 watt output |
Motorola |
| 1734 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 1735 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 1736 |
MM4048 |
PNP silicon annular transistor designed for low frequency, low noise, low level amplifier applications |
Motorola |
| 1737 |
MM5189 |
NPN Silicon High-Current Amplifier And Core driver transistor |
Motorola |
| 1738 |
MM5262 |
NPN Silicon High-Current Amplifier And Core driver transistor |
Motorola |
| 1739 |
MM8003 |
NPN silicon high-frequency transistor designed for high-frequency CATV amplifier applications |
Motorola |
| 1740 |
MMCM3798 |
PNP Silicon micro-miniature transistor designed for low-level, low-noise amplifier applications |
Motorola |
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