| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2N1559 |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1712 |
2N1559A |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1713 |
2N1560 |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1714 |
2N1560A |
PNP germanium power transistor for switching and amplifier applications in high-reliability equipment |
Motorola |
| 1715 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
| 1716 |
2N1613 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1717 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1718 |
2N1613 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
| 1719 |
2N1613A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1720 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1721 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1722 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 1723 |
2N1700 |
Silicon N-P-N power switching transistor. 60V, 5W. |
General Electric Solid State |
| 1724 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1725 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 1726 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1727 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 1728 |
2N1711 |
Silicon NPN Planar Switching Transistor |
TELEFUNKEN |
| 1729 |
2N1711A |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 1730 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1731 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 1732 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 1733 |
2N1893 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 1734 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 1735 |
2N1893 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
| 1736 |
2N1924 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1737 |
2N1925 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1738 |
2N1926 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 1739 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 1740 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| | | |
