No. |
Part Name |
Description |
Manufacturer |
1711 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
1712 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
1713 |
2N6659 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
1714 |
2N6660 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
1715 |
2N6661 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
1716 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
1717 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
1718 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
1719 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
1720 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
1721 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
1722 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
1723 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
1724 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
1725 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
1726 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
1727 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
1728 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
1729 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
1730 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
1731 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
1732 |
2N6796 |
TMOS FET TRANSISTOR N - CHANNEL |
SemeLAB |
1733 |
2N697 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
1734 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
1735 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
1736 |
2N7000 |
N-channel enhancement mode field-effect transistor |
Philips |
1737 |
2N7000 |
Enhancement-Mode MOSFET Transistors |
Vishay |
1738 |
2N7000_D26Z |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
1739 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
1740 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
| | | |