| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1712 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1713 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1714 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1715 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1716 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 1717 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1718 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 1719 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 1720 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 1721 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 1722 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1723 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1724 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1725 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1726 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1727 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 1728 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1729 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 1730 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 1731 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 1732 |
2N6107 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 1733 |
2N6107 |
Power 7A 70V Discrete PNP |
ON Semiconductor |
| 1734 |
2N6109 |
Power 7A 50V Discrete PNP |
ON Semiconductor |
| 1735 |
2N6111 |
Power 7A 30V Discrete PNP |
ON Semiconductor |
| 1736 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 1737 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 1738 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
| 1739 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
| 1740 |
2N6193 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
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