No. |
Part Name |
Description |
Manufacturer |
1711 |
HZU12G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1712 |
HZU5.1G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1713 |
HZU5.6G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1714 |
HZU5.6Z |
Surge Absorption Diodes |
Hitachi Semiconductor |
1715 |
HZU6.2G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1716 |
HZU6.2Z |
Surge Absorption Diodes |
Hitachi Semiconductor |
1717 |
HZU6.8G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1718 |
HZU6.8Z |
Surge Absorption Diodes |
Hitachi Semiconductor |
1719 |
HZU7.5G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1720 |
HZU8.2G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1721 |
HZU9.1G |
Surge Absorption Diodes |
Hitachi Semiconductor |
1722 |
ICX452 |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
1723 |
ICX452AQ |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
1724 |
ICX452AQF |
Diagonal 9.04 mm (Type 1/1.8) 5.13M-Pixel CCD Image Sensor for High-Resolution Digital Still Cameras |
SONY |
1725 |
IDT77V012L155DA |
Data Path Interface to UTOPIA Level 1 Header Translation Device |
IDT |
1726 |
INA159 |
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier |
Texas Instruments |
1727 |
INA159-EP |
Enhanced Product Precision, Gain of 0.2 Level Translation Difference Amplifier |
Texas Instruments |
1728 |
INA159AIDGKR |
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
1729 |
INA159AIDGKRG4 |
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
1730 |
INA159AIDGKT |
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
1731 |
INA159AIDGKTG4 |
High-Speed, Precision Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -40 to 125 |
Texas Instruments |
1732 |
INA159AMDGKTEP |
Enhanced Product Precision, Gain of 0.2 Level Translation Difference Amplifier 8-VSSOP -55 to 125 |
Texas Instruments |
1733 |
IP4085CX4 |
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 |
NXP Semiconductors |
1734 |
IP4302CX2 |
Low profile bidirectional low capacitance ESD protection diode |
NXP Semiconductors |
1735 |
IP4385CX4 |
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 |
NXP Semiconductors |
1736 |
IP4386CX4 |
Integrated high-performance ESD protection diodes |
Nexperia |
1737 |
IP4386CX4 |
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 |
NXP Semiconductors |
1738 |
IP4387CX4 |
Integrated high-performance ESD-protection diodes to IEC61000-4-2, level 4 |
NXP Semiconductors |
1739 |
IRAC5001-HS48V |
48V, 50A continuous current OR-ing function design kit featuring IR5001S and IRF6644 |
International Rectifier |
1740 |
IRMCS2011 |
Complete Encoder Based Servo Drive Design Platform iMOTION Develpment System |
International Rectifier |
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