| No. |
Part Name |
Description |
Manufacturer |
| 1711 |
2A05 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 1712 |
2A06 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 1713 |
2A07 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 1714 |
2FI100A |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1715 |
2FI100A-030 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 1716 |
2FI100A-060 |
fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 1717 |
2FI100F |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1718 |
2FI100F-030 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 1719 |
2FI100F-060 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 1720 |
2FI100G |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1721 |
2FI100G-100 |
Fast recovery diode module for high speed rectifier, arc-welder applications |
COLLMER SEMICONDUCTOR INC |
| 1722 |
2FI200A-060 |
Fast recovery diode module for switching power supply, uninterruptible power supply applications |
COLLMER SEMICONDUCTOR INC |
| 1723 |
2FI200A-060 |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1724 |
2FI50A |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1725 |
2FI50F |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1726 |
2FI50G |
FAST RECOVERY DIODE MODULE |
Fuji Electric |
| 1727 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 1728 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 1729 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 1730 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 1731 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 1732 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 1733 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1734 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1735 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1736 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1737 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1738 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1739 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1740 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
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