No. |
Part Name |
Description |
Manufacturer |
1741 |
GENINFO |
General Information for ESTA prop/ESTA dry Power Factor Correction Capacitors Low Voltage |
Vishay |
1742 |
GTL2000DGG |
22-bit bi-directional low voltage translator |
NXP Semiconductors |
1743 |
GTL2000DGG |
GTL2000; 22-bit bi-directional low voltage translator |
Philips |
1744 |
GTL2000DL |
22-bit bi-directional low voltage translator |
NXP Semiconductors |
1745 |
GTL2002D |
2-bit bidirectional low voltage translator |
NXP Semiconductors |
1746 |
GTL2002D |
2-bit bi-directional low voltage translator |
Philips |
1747 |
GTL2002DC |
2-bit bidirectional low voltage translator |
NXP Semiconductors |
1748 |
GTL2002DC |
2-bit bi-directional low voltage translator |
Philips |
1749 |
GTL2002DP |
2-bit bidirectional low voltage translator |
NXP Semiconductors |
1750 |
GTL2002DP |
2-bit bi-directional low voltage translator |
Philips |
1751 |
GTL2002GM |
2-bit bidirectional low voltage translator |
NXP Semiconductors |
1752 |
GTL2003BQ |
8-bit bidirectional low voltage translator |
NXP Semiconductors |
1753 |
GTL2003PW |
8-bit bidirectional low voltage translator |
NXP Semiconductors |
1754 |
GTL2010BS |
10-bit bidirectional low voltage translator |
NXP Semiconductors |
1755 |
GTL2010BS |
GTL2010; 10-bit bi-directional low voltage translator |
Philips |
1756 |
GTL2010PW |
10-bit bidirectional low voltage translator |
NXP Semiconductors |
1757 |
HFBR-53A5VEM |
3.3 V 1 x 9 Fiber Optic Transceivers for Gigabit Ethernet Low Voltage |
Agilent (Hewlett-Packard) |
1758 |
HFBR-53A5VFM |
3.3 V 1 x 9 Fiber Optic Transceivers for Gigabit Ethernet Low Voltage |
Agilent (Hewlett-Packard) |
1759 |
HM62V256LFP-10SLT |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
1760 |
HM62V256LFP-10T |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
1761 |
HM62V256LFP-7SLT |
32,768-word x 8-bit low voltage operation CMOS static RAM, 70ns |
Hitachi Semiconductor |
1762 |
HM62V256LFP-8ULT |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns |
Hitachi Semiconductor |
1763 |
HM62V256LT-10 |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
1764 |
HM62V256LT-8SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns |
Hitachi Semiconductor |
1765 |
HM62V256LTM-10 |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
1766 |
HM62V256LTM-10SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 100ns |
Hitachi Semiconductor |
1767 |
HM62V256LTM-7SL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 70ns |
Hitachi Semiconductor |
1768 |
HM62V256LTM-8UL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns |
Hitachi Semiconductor |
1769 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
1770 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
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