| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 1742 |
2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 1743 |
2N3009 |
NPN silicon epitaxial switching transistor |
Motorola |
| 1744 |
2N3009 |
NPN switching transistor |
National Semiconductor |
| 1745 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
| 1746 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 1747 |
2N3011 |
NPN switching transistor |
National Semiconductor |
| 1748 |
2N3012 |
PNP Switching Transistor |
National Semiconductor |
| 1749 |
2N3013 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 1750 |
2N3013 |
NPN silicon epitaxial switching transistor |
Motorola |
| 1751 |
2N3013 |
NPN switching transistor |
National Semiconductor |
| 1752 |
2N3014 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
| 1753 |
2N3014 |
NPN silicon epitaxial switching transistor |
Motorola |
| 1754 |
2N3015 |
NPN switching transistor |
National Semiconductor |
| 1755 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
| 1756 |
2N3053 |
Power NPN Epitaxial transistor - Fast switching |
SESCOSEM |
| 1757 |
2N3054 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1758 |
2N3054 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 1759 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 1760 |
2N3055 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 1761 |
2N3055 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 1762 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 1763 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
| 1764 |
2N3055S |
NPN Power transistor Homobase - LF amplifier and switching, complementary BDX18 |
SESCOSEM |
| 1765 |
2N3133 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 1766 |
2N3134 |
Silicon p-n-p medium power switching transistor |
Mullard |
| 1767 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1768 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 1769 |
2N3209 |
PNP Switching Transistor |
National Semiconductor |
| 1770 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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