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Datasheets for .65

Datasheets found :: 1903
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No. Part Name Description Manufacturer
1741 R3130N46BA5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V. Output delay time 100ms. Output type Nch open drain. Taping type TR. Ricoh
1742 R3130N46BC5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V.Output delay time 100ms. Output type CMOS. Taping type TR. Ricoh
1743 R3130N46DA5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V. Output delay time 200ms. Output type Nch open drain. Taping type TR. Ricoh
1744 R3130N46DC5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V.Output delay time 200ms. Output type CMOS. Taping type TR. Ricoh
1745 R3130N46EA5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. Ricoh
1746 R3130N46EC5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V. Standard output delay time 240ms. Output type CMOS. Taping type TR. Ricoh
1747 R3130N46HA5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V. Output delay time 400ms. Output type Nch open drain. Taping type TR. Ricoh
1748 R3130N46HC5-TR Low voltage detector with built-in delay circuit. Detector threshold 4.65V.Output delay time 400ms. Output type CMOS. Taping type TR. Ricoh
1749 RFL1N18 1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs Intersil
1750 RFL1N18 1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS New Jersey Semiconductor
1751 RFL1N18L 1A 180V AND 200V 3.65 OHM N-CHANNEL POWER MOSFETS New Jersey Semiconductor
1752 RFL1N20 1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs Intersil
1753 RFL1P08 1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs Intersil
1754 RFL1P08 1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS New Jersey Semiconductor
1755 RFL1P10 1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs Intersil
1756 RFL1P10 1A -80V AND -100V 3.65 OHM P-CHANNEL POWER MOSFETS New Jersey Semiconductor
1757 SC2002A CHARACTER LCD MODULE display format: 20x2; module size: 116x37x8.8; viewing size: 85.0x18.6; character size: 3.20x5.55; dot size: 0.60x0.65; SUNLIKE
1758 SC2402A CHARACTER LCD MODULE display format: 24x2; module size: 118x36x8.8; viewing size: 93.5x16.0; character size: 3.20x5.55; dot size: 0.60x0.65; SUNLIKE
1759 SC4002A CHARACTER LCD MODULE display format: 40x2; module size: 182x33.5x8.8; viewing size: 154.0x15.3; character size: 3.20x5.55; dot size: 0.60x0.65; SUNLIKE
1760 SD1868 1.6-1.65GHz 30W 28V NPN transistor designed for Microwave telecommunication applications SGS Thomson Microelectronics
1761 SD1891 1.65GHz 3W 28V NPN Silicon RF Transistor designed for MARISAT Applications SGS Thomson Microelectronics
1762 SD1893 1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications SGS Thomson Microelectronics
1763 SD1895 1.65GHz 15W 28V NPN Silicon RF Transistor designed for MARISAT Applications SGS Thomson Microelectronics
1764 SD1897 1.65 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1765 SN65HVD01 3.3V RS-485 with Low Voltage (1.65-V) I/O Supply & Selectable Data Transmission Speeds Texas Instruments
1766 SN65HVD01DRCR 3.3 V RS-485 with 1.65 V I/O Supply and Selectable Data Rate 10-VSON -40 to 125 Texas Instruments
1767 SN65HVD01DRCT 3.3 V RS-485 with 1.65 V I/O Supply and Selectable Data Rate 10-VSON -40 to 125 Texas Instruments
1768 STB10N95K5 N-channel 950 V, 0.65 Ohm typ., 8 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package ST Microelectronics
1769 STB10NK60Z N-CHANNEL 600V 0.65 OHM 10A ZENER-PROTECTED SUPERMESH POWER MOSFET SGS Thomson Microelectronics
1770 STB10NK60Z N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET ST Microelectronics


Datasheets found :: 1903
Page: | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 |



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