No. |
Part Name |
Description |
Manufacturer |
1741 |
M464S3254DTS-L7A/C7A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
1742 |
M464S3254DTS-L7C/C7C |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
1743 |
M464S6453BK0 |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Datasheet |
Samsung Electronic |
1744 |
M464S6453CKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
1745 |
M464S6453DKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
1746 |
M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet |
Samsung Electronic |
1747 |
MAX14805 |
16-Channel (Two Banks of 8-Channel), High-Voltage Analog Switches |
MAXIM - Dallas Semiconductor |
1748 |
MAX14805CCM+ |
16-Channel (Two Banks of 8-Channel), High-Voltage Analog Switches |
MAXIM - Dallas Semiconductor |
1749 |
MAX14806 |
16-Channel (Two Banks of 8-Channel), High-Voltage Analog Switches |
MAXIM - Dallas Semiconductor |
1750 |
MAX14806CCM+ |
16-Channel (Two Banks of 8-Channel), High-Voltage Analog Switches |
MAXIM - Dallas Semiconductor |
1751 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
1752 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
1753 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
1754 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
1755 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
1756 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
1757 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
1758 |
NT128S64V88C0G-75B |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1759 |
NT128S64V88C0G-7K |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1760 |
NT128S64V88C0G-8B |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1761 |
NT256S64V88A0G-75B |
256Mb: 32Mx64 DDR SDRAM module based on 32Mx8, 4banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1762 |
NT256S64V88A0G-7K |
256Mb: 32Mx64 DDR SDRAM module based on 32Mx8, 4banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1763 |
NT256S64V88A0G-8B |
256Mb: 32Mx64 DDR SDRAM module based on 32Mx8, 4banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1764 |
NT256S64V8HC0G-75B |
256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD |
NANYA |
1765 |
NT256S64V8HC0G-7B |
256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD |
NANYA |
1766 |
NT256S64V8HC0G-7K |
256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD |
NANYA |
1767 |
NT256S64V8HC0G-8B |
256Mb: 32Mx64 SDRAM module based on 16Mx8, 4banks, 3.3V synchronous DRAM with SPD |
NANYA |
1768 |
NT256S64VH8A0GM-75B |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1769 |
NT256S64VH8A0GM-7K |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
1770 |
NT256S64VH8A0GM-8B |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD |
NANYA |
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