| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
BAS79D |
Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
Siemens |
| 1742 |
BAS81 |
Schottky barrier diodes |
Philips |
| 1743 |
BAS81 |
Small Signal Schottky Barrier Diodes |
Vishay |
| 1744 |
BAS82 |
Schottky barrier diodes |
Philips |
| 1745 |
BAS82 |
Small Signal Schottky Barrier Diodes |
Vishay |
| 1746 |
BAS83 |
Schottky barrier diodes |
Philips |
| 1747 |
BAS83 |
Small Signal Schottky Barrier Diodes |
Vishay |
| 1748 |
BAS85 |
SILICON SCHOTTKY BARRIER DIODE |
Diodes |
| 1749 |
BAS85 |
Schottky Diodes |
General Semiconductor |
| 1750 |
BAS85 |
SMALL SIGNAL SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 1751 |
BAS85 |
Schottky barrier diode |
Nexperia |
| 1752 |
BAS85 |
Schottky barrier diode |
NXP Semiconductors |
| 1753 |
BAS85 |
Schottky barrier diode |
Philips |
| 1754 |
BAS85 |
Schottky Diode |
Rectron Semiconductor |
| 1755 |
BAS85 |
Discrete Devices-Diode-Schottky Diode & Array |
Taiwan Semiconductor |
| 1756 |
BAS85 |
Small Signal Schottky Barrier Diode |
Vishay |
| 1757 |
BAS85T |
SILICON SCHOTTKY BARRIER DIODE |
Diodes |
| 1758 |
BAS86 |
SMALL SIGNAL SCHOTTKY BARRIER RECTIFIERS |
Micro Commercial Components |
| 1759 |
BAS86 |
Schottky barrier single diode |
Nexperia |
| 1760 |
BAS86 |
Schottky barrier single diode |
NXP Semiconductors |
| 1761 |
BAS86 |
Schottky barrier diode |
Philips |
| 1762 |
BAS86 |
Schottky Diode |
Rectron Semiconductor |
| 1763 |
BAS86 |
Small Signal Schottky Barrier Diode |
Vishay |
| 1764 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1765 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1766 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1767 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1768 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1769 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 1770 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
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