No. |
Part Name |
Description |
Manufacturer |
1741 |
DS1135Z-8+T&R |
3-in-1 High-Speed Silicon Delay Line |
MAXIM - Dallas Semiconductor |
1742 |
DS1135Z-8_T_R |
3-in-1 High-Speed Silicon Delay Line |
Dallas Semiconductor |
1743 |
EL7300Q-110 |
highly integrated single chip solution for the Flat Panel Display applications |
Etron Tech |
1744 |
EL7300Q-140 |
highly integrated single chip solution for the Flat Panel Display applications |
Etron Tech |
1745 |
EL7300Q-160 |
highly integrated single chip solution for the Flat Panel Display applications |
Etron Tech |
1746 |
EM033C08 |
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package |
Integrated Silicon Solution Inc |
1747 |
EM033C08N |
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package |
Integrated Silicon Solution Inc |
1748 |
EM033C08T |
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package |
Integrated Silicon Solution Inc |
1749 |
ENA0730 |
Variable Speed Single-phase Full-Wave Pre-Driver |
ON Semiconductor |
1750 |
ENA1534 |
Variable Speed Single-phase Fan Motor Driver |
ON Semiconductor |
1751 |
ENA1915 |
Variable Speed Single-phase Full-wave Fan Motor Pre-driver IC |
ON Semiconductor |
1752 |
EPM5032 |
High Speed Single LAB MAX 5000 EPLD |
Altera Corporation |
1753 |
EVAL-AD7400EB-U1 |
Isolated Sigma-Delta Modulator (10 MHz Data Rate) |
Analog Devices |
1754 |
EVAL-AD7713EB |
LC2MOS Loop-Powered Signal Conditioning ADC |
Analog Devices |
1755 |
EVALSTGAP1S |
Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver |
ST Microelectronics |
1756 |
EVQPU |
Tactile Switches (Light Touch Switches) - Small-sized Side-operational SMD |
Panasonic |
1757 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1758 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1759 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1760 |
F1003 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1761 |
F1004 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1762 |
F1005 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1763 |
F1006 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1764 |
F1007 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1765 |
F1008 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1766 |
F1012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1767 |
F1014 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1768 |
F1015 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1769 |
F1016 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
1770 |
F1018 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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