| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 1742 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
| 1743 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| 1744 |
2SB1001 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1745 |
2SB1002 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1746 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1747 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 1748 |
2SB1016 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 1749 |
2SB1016A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1750 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1751 |
2SB1025 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1752 |
2SB1026 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1753 |
2SB1028 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1754 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 1755 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
| 1756 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1757 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 1758 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 1759 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 1760 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 1761 |
2SB1059 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 1762 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 1763 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 1764 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 1765 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 1766 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 1767 |
2SB1109 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 1768 |
2SB1110 |
SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER) |
Hitachi Semiconductor |
| 1769 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 1770 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
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