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Datasheets for N MIC

Datasheets found :: 31297
Page: | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 |
No. Part Name Description Manufacturer
1741 AM1214-175 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1742 AM1214-200 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1743 AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
1744 AM1214-300 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1745 AM1214-325 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1746 AM1416-001 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1747 AM1416-003 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1748 AM1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
1749 AM1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
1750 AM1517-012 SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1751 AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS SGS Thomson Microelectronics
1752 AM1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
1753 AM1616-050 High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT SGS Thomson Microelectronics
1754 AM2023-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1755 AM2023-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1756 AM2023-006 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1757 AM2327-001 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1758 AM2327-003 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1759 AM2327-005 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
1760 AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1761 AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
1762 AM2931-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
1763 AM2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1764 AM3135-007 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1765 AM3135-014 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1766 AM3135-025 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1767 AM3135-035 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1768 AM3135-045 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1769 AM3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
1770 AM80610-018 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics


Datasheets found :: 31297
Page: | 55 | 56 | 57 | 58 | 59 | 60 | 61 | 62 | 63 |



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