| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
800S-N024 |
Input voltage 180-260 VAC;output voltage 24 VDC;output current:33 A; 800 W enclosed parallel power supply |
FranMar International |
| 1742 |
800S-N048 |
Input voltage 180-260 VAC;output voltage 48 VDC;output current:16 A; 800 W enclosed parallel power supply |
FranMar International |
| 1743 |
80C51 |
Low power single card reader |
Philips |
| 1744 |
82012 |
Phase Control SCR (750-900 Amperes Avg 100-2200 Volts) |
Powerex Power Semiconductors |
| 1745 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 1746 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1747 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1748 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1749 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1750 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1751 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1752 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1753 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1754 |
8481A |
8481A Power Sensor, 10 MHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 1755 |
8481B |
8481B High Power Sensor, 10 MHz to 18 GHz, 25W |
Agilent (Hewlett-Packard) |
| 1756 |
8481D |
8481D Diode Power Sensor, 10 MHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 1757 |
8481H |
8481H Power Sensor, 10 MHz to 18 GHz, 3W |
Agilent (Hewlett-Packard) |
| 1758 |
8482A |
8482A Power Sensor, 100 kHz to 4.2 GHz |
Agilent (Hewlett-Packard) |
| 1759 |
8482B |
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W |
Agilent (Hewlett-Packard) |
| 1760 |
8482H |
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W |
Agilent (Hewlett-Packard) |
| 1761 |
8483A |
8483A Power Sensor, 100 kHz to 2 GHz, 75 ohm |
Agilent (Hewlett-Packard) |
| 1762 |
8485A |
8485A Power Sensor, 50 MHz to 26.5 GHz |
Agilent (Hewlett-Packard) |
| 1763 |
8485D |
8485D Diode Power Sensor, 50 MHz to 26.5 GHz |
Agilent (Hewlett-Packard) |
| 1764 |
8487A |
8487A Power Sensor, 50 MHz to 50 GHz |
Agilent (Hewlett-Packard) |
| 1765 |
8487D |
8487D Diode Power Sensor, 50 MHz to 50 GHz |
Agilent (Hewlett-Packard) |
| 1766 |
85HF10 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 1767 |
85HF100 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 1768 |
85HF100R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 1769 |
85HF10R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
| 1770 |
85HF120 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
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