| No. |
Part Name |
Description |
Manufacturer |
| 1741 |
MCH3144 |
Low-Saturation Voltage Transistors |
SANYO |
| 1742 |
MCH3145 |
Low-Saturation Voltage Transistors |
SANYO |
| 1743 |
MCH3211 |
Low-Saturation Voltage Transistors |
SANYO |
| 1744 |
MCH3243 |
Low-Saturation Voltage Transistors |
SANYO |
| 1745 |
MCH3244 |
Low-Saturation Voltage Transistors |
SANYO |
| 1746 |
MCH3245 |
Low-Saturation Voltage Transistors |
SANYO |
| 1747 |
MDTXXA |
Circuit Configurations Available |
Infineon |
| 1748 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 1749 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 1750 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1751 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1752 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 1753 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 1754 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1755 |
MJ901 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 1756 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 1757 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 1758 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 1759 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 1760 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 1761 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 1762 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 1763 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1764 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1765 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1766 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1767 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1768 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1769 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1770 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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