| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 1772 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 1773 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 1774 |
BF457 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1775 |
BF458 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1776 |
BF459 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1777 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 1778 |
BFG19 |
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |
Siemens |
| 1779 |
BFG193 |
NPN Silicon RF transistor for low noi... |
Infineon |
| 1780 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 1781 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 1782 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 1783 |
BFG196 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 1784 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 1785 |
BFG19S |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
Siemens |
| 1786 |
BFP181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 1787 |
BFP181R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 1788 |
BFP181W |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 1789 |
BFP181W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 1790 |
BFP182 |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 1791 |
BFP182 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 1792 |
BFP182R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 1793 |
BFP182R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 1794 |
BFP182W |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA |
Infineon |
| 1795 |
BFP182W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 1796 |
BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 1797 |
BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA |
Infineon |
| 1798 |
BFP183R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
| 1799 |
BFP183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 1800 |
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
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