No. |
Part Name |
Description |
Manufacturer |
1771 |
MIC10937J-40 |
V. F. Alphanumeric Display Controller |
Micrel Semiconductor |
1772 |
MIC10941 |
V. F. Alphanumeric and Bargraph Display Controller Summary Information*?Not Recommended for New Designs |
Micrel Semiconductor |
1773 |
MIC10941/10939 |
V. F. Alphanumeric and Bargraph Display Controller |
Micrel Semiconductor |
1774 |
MIC10941P-50 |
V. F. Alphanumeric and Bargraph Display Controller Summary Information*?Not Recommended for New Designs |
Micrel Semiconductor |
1775 |
MIC10941PE-50 |
V. F. Alphanumeric and Bargraph Display Controller Summary Information*?Not Recommended for New Designs |
Micrel Semiconductor |
1776 |
MJ15001 |
NPN planar silicon transistor. Audio power amplifier DC to DC converter |
Wing Shing Computer Components |
1777 |
MJ4502 |
PNP. Planar silicon transistor. Audio power amplifier DC to DC converter. |
Wing Shing Computer Components |
1778 |
MMBT6028 |
Silicon programmable unijunction transistor (PUTs). Anode-to-cathode voltage +-40V. |
Planeta |
1779 |
MPC850ABEC |
MPC850 (Rev. A/B/C) Hardware Specifications |
Motorola |
1780 |
MX536AJQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
1781 |
MX536AKQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
1782 |
MX536ASQ |
True RMS-to-DC converter. 2MHz bandwidth for Vrms > 1V. Auxiliary dB output: 60dB range. Low power: 1.2mA(typ). |
MAXIM - Dallas Semiconductor |
1783 |
MX636JQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
1784 |
MX636KQ |
True RMS-to-DC converter. 1MHz bandwidth for Vrms > 100mV. Auxiliary dB output: 50dB range. Low power: 0.8mA(typ). |
MAXIM - Dallas Semiconductor |
1785 |
MX7536CD |
Microprocessor-compatible, 14-bit D/A converter. Accuracy +-2 LSB. |
MAXIM - Dallas Semiconductor |
1786 |
N28F001BN-B120 |
1-Mbit(128K x 8) boot block flash memory. Access speed 120 ns |
Intel |
1787 |
N28F001BN-B150 |
1-Mbit(128K x 8) boot block flash memory. Access speed 150 ns |
Intel |
1788 |
N28F001BN-B70 |
1-Mbit(128K x 8) boot block flash memory. Access speed 70 ns |
Intel |
1789 |
N28F001BN-B90 |
1-Mbit(128K x 8) boot block flash memory. Access speed 90 ns |
Intel |
1790 |
N28F001BN-T120 |
1-Mbit(128K x 8) boot block flash memory. Access speed 120 ns |
Intel |
1791 |
N28F001BN-T150 |
1-Mbit(128K x 8) boot block flash memory. Access speed 150 ns |
Intel |
1792 |
N28F001BN-T70 |
1-Mbit(128K x 8) boot block flash memory. Access speed 70 ns |
Intel |
1793 |
N28F001BN-T90 |
1-Mbit(128K x 8) boot block flash memory. Access speed 90 ns |
Intel |
1794 |
N28F020-70 |
2048(256 x 8) CMOS flash memory. Access speed 70 ns |
Intel |
1795 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
1796 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
1797 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
1798 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
1799 |
NTE129 |
Silicon complemenary PNP transistor. Audio output, video, driver. |
NTE Electronics |
1800 |
NTE153 |
Silicon complementary PNP transistor. Audio power amplifier, switch. |
NTE Electronics |
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