No. |
Part Name |
Description |
Manufacturer |
1771 |
BC858AW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1772 |
BC858AW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1773 |
BC858BW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1774 |
BC858BW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1775 |
BC858CW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1776 |
BC858CW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1777 |
BD142 |
Silicon N-P-N high power transistor. 50V, 117W. |
General Electric Solid State |
1778 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
1779 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
1780 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
1781 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
1782 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
1783 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
1784 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
1785 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
1786 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
1787 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
1788 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
1789 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
1790 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
1791 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
1792 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
1793 |
BD535 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
1794 |
BD536 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 50W. |
General Electric Solid State |
1795 |
BD537 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 50W. |
General Electric Solid State |
1796 |
BD538 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. |
General Electric Solid State |
1797 |
BD797 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V, 65W. |
General Electric Solid State |
1798 |
BD798 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V, 65W. |
General Electric Solid State |
1799 |
BD799 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V, 65W. |
General Electric Solid State |
1800 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
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