No. |
Part Name |
Description |
Manufacturer |
1771 |
P4KE120CA |
102.20V; 400W transient voltage suppressor |
Diodes |
1772 |
PACZIG128402Q |
2.2 Kom/33om, 150 pF, IEEE 1284 parallel port ESD/EMI/termination network |
California Micro Devices Corp |
1773 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1774 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1775 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1776 |
PBRN123ET |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1777 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
1778 |
PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1779 |
PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1780 |
PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1781 |
PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1782 |
PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1783 |
PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
1784 |
PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
1785 |
PDTA123E |
R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1786 |
PDTA123E |
R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1787 |
PDTA123EE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1788 |
PDTA123EE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1789 |
PDTA123EE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1790 |
PDTA123EE |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1791 |
PDTA123EE |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1792 |
PDTA123EE |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1793 |
PDTA123EEF |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1794 |
PDTA123EEF |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1795 |
PDTA123EK |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1796 |
PDTA123EK |
PDTA123E series; PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Philips |
1797 |
PDTA123EM |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1798 |
PDTA123EM |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
1799 |
PDTA123EM |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
1800 |
PDTA123EM |
PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
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