| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 1772 |
GT15J331 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1773 |
GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1774 |
GT15Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1775 |
GT15Q102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1776 |
GT15Q301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1777 |
GT15Q311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1778 |
GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1779 |
GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION |
TOSHIBA |
| 1780 |
GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 1781 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1782 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 1783 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 1784 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1785 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1786 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1787 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 1788 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1789 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 1790 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 1791 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1792 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 1793 |
GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS |
TOSHIBA |
| 1794 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 1795 |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications |
TOSHIBA |
| 1796 |
GT40M101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1797 |
GT40M301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 1798 |
GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 1799 |
GT40Q322 |
Voltage Resonance Inverter Switching Application |
TOSHIBA |
| 1800 |
GT40T101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
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