| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
CR12AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1772 |
CR12AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1773 |
CR12AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1774 |
CR12BM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1775 |
CR20EY |
HIGH-SPEED SWITCHING THYRISTOR - MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1776 |
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1777 |
CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1778 |
CR2AM-8A |
LOW POWER USE GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1779 |
CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1780 |
CR3EM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1781 |
CR3JM |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1782 |
CR3JM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1783 |
CR3PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1784 |
CR3PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1785 |
CR3PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1786 |
CR5AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1787 |
CR5AS-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1788 |
CR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1789 |
CR6CM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1790 |
CR6CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1791 |
CR6CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1792 |
CR6PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1793 |
CR6PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1794 |
CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1795 |
CR8AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1796 |
CR8AM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1797 |
CR8AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1798 |
CR8PM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 1799 |
CR8PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 1800 |
CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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