| No. |
Part Name |
Description |
Manufacturer |
| 1771 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 1772 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 1773 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 1774 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 1775 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 1776 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 1777 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 1778 |
2N4392CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1779 |
2N4393CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1780 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 1781 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 1782 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 1783 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 1784 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 1785 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 1786 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1787 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1788 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1789 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 1790 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1791 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1792 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 1793 |
2N460 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
| 1794 |
2N461 |
PNP germanium transistor for general purpose industrial applications |
Motorola |
| 1795 |
2N464 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 1796 |
2N465 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 1797 |
2N466 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 1798 |
2N467 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 1799 |
2N4895 |
Planar transistor for switching applications |
SGS-ATES |
| 1800 |
2N4896 |
Planar transistor for switching applications |
SGS-ATES |
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