| No. |
Part Name |
Description |
Manufacturer |
| 17731 |
TC554161AFTI-70 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17732 |
TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17733 |
TC554161AFTI-85 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17734 |
TC554161AFTI-85L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17735 |
TC554161FTI-10 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17736 |
TC554161FTI-10L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17737 |
TC554161FTI-85 |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17738 |
TC554161FTI-85L |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17739 |
TC554161FTL |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17740 |
TC554161FTL-10 |
262, 144-word by 16 bit static RAM, access time 100ns |
TOSHIBA |
| 17741 |
TC554161FTL-10L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
| 17742 |
TC554161FTL-10V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17743 |
TC554161FTL-70 |
262, 144-word by 16 bit static RAM, access time 70ns |
TOSHIBA |
| 17744 |
TC554161FTL-70L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
| 17745 |
TC554161FTL-70V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17746 |
TC554161FTL-85 |
262, 144-word by 16 bit static RAM, access time 85ns |
TOSHIBA |
| 17747 |
TC554161FTL-85L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
| 17748 |
TC554161FTL-85V |
262,144-WORD BY 16-BIT STATIC RAM |
TOSHIBA |
| 17749 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17750 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17751 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17752 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17753 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17754 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17755 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17756 |
TC5564AFL-15 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 17757 |
TC5564AFL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 17758 |
TC5564APL-15 |
-0.3 to 7V; 1W; 150ns; 8.192 word x 8bit MOS static RAM |
TOSHIBA |
| 17759 |
TC5564APL-20 |
8,192 WORD X 8 BIT CMOS STATIC RAM |
TOSHIBA |
| 17760 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
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