| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
F087 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1802 |
F102 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1803 |
F107 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1804 |
F112 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1805 |
F202 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1806 |
F207 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1807 |
F307 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1808 |
F402 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1809 |
F407 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1810 |
F602 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1811 |
F607 |
ULTRAHIGH - SPEED SWITCHING, MOTOR DRIVER APPLICATIONS |
SANYO |
| 1812 |
F802 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 1813 |
FND310C |
0.362 - INCH 7 - SEGMENT DISPLAY |
Fairchild Semiconductor |
| 1814 |
FND317C |
0.362 - INCH 7 - SEGMENT DISPLAY |
Fairchild Semiconductor |
| 1815 |
FND318C |
0.362 - INCH 7 - SEGMENT DISPLAY |
Fairchild Semiconductor |
| 1816 |
FPH101 |
Dual expandable input NAND power gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1817 |
FPH103 |
Dual expandable input NAND power gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1818 |
FPH111 |
Single expandable 8-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1819 |
FPH113 |
Single expandable 8-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1820 |
FPH121 |
Dual expandable 4-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1821 |
FPH123 |
Dual expandable 4-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1822 |
FPH131 |
Triple 3-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1823 |
FPH133 |
Triple 3-input NAND gate (positive logic) - Standard line summary |
AEG-TELEFUNKEN |
| 1824 |
FS19 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 1825 |
FS36 |
Tungsten point contact germanium diode - switching |
SESCOSEM |
| 1826 |
FU-480SDF |
Optoelectronics - Single Channel-10Gb/s |
Mitsubishi Electric Corporation |
| 1827 |
FU-484SDF |
Optoelectronics - Single Channel-10Gb/s |
Mitsubishi Electric Corporation |
| 1828 |
FU-48SDF-1 |
Optoelectronics - Single Channel-2.5Gb/s |
Mitsubishi Electric Corporation |
| 1829 |
FU-627SDF |
Optoelectronics - Single Channel--155Mb/s, 622Mb/s |
Mitsubishi Electric Corporation |
| 1830 |
FU-641SEA-1M5/6 |
Optoelectronics - Single Channel-10Gb/s |
Mitsubishi Electric Corporation |
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