No. |
Part Name |
Description |
Manufacturer |
1801 |
IR3599A |
A phase multiplier which is designed to double or quadruple the effective maximum phase count from the controller. |
International Rectifier |
1802 |
IR3599AMTRPBF |
A phase multiplier which is designed to double or quadruple the effective maximum phase count from the controller. |
International Rectifier |
1803 |
IR3599MTRPBF |
A phase multiplier which is designed to double or quadruple the effective maximum phase count from the controller. |
International Rectifier |
1804 |
ISL6740IB |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1805 |
ISL6740IBZ |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1806 |
ISL6740IV |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1807 |
ISL6740IVZ |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1808 |
ISL6741IB |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1809 |
ISL6741IBZ |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1810 |
ISL6741IV |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1811 |
ISL6741IVZ |
Flexible Double Ended Voltage and Current Mode PWM Controllers |
Intersil |
1812 |
ITT3001 |
High Voltage high temperature double plug diode |
ITT Semiconductors |
1813 |
ITT3002 |
High Voltage high temperature double plug diode |
ITT Semiconductors |
1814 |
ITT3003 |
High Voltage high temperature double plug diode |
ITT Semiconductors |
1815 |
K4D261638E |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1816 |
K4D261638E-TC2A |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1817 |
K4D261638E-TC33 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1818 |
K4D261638E-TC36 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1819 |
K4D261638E-TC40 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1820 |
K4D261638E-TC50 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
1821 |
K4D263238A |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1822 |
K4D263238A-GC33 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1823 |
K4D263238A-GC36 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1824 |
K4D263238A-GC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1825 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1826 |
K4D263238A-GC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1827 |
K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1828 |
K4D263238D-QC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1829 |
K4D263238D-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
1830 |
K4D263238E |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
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