No. |
Part Name |
Description |
Manufacturer |
1801 |
AQW227N |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
1802 |
AQW227NA |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
1803 |
AQW227NAX |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
1804 |
AQW227NAZ |
RF (Radio Frequency) Type [2-Channel (Form A) Type] - Low On resistance |
Matsushita Electric Works(Nais) |
1805 |
AQY221N1S |
RF (Radio Frequency) C x R 20 Type |
Matsushita Electric Works(Nais) |
1806 |
AQY221N1SX |
PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
1807 |
AQY221N1SZ |
PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
1808 |
AQY221N2VW |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
1809 |
AQY221N2VY |
PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. |
Matsushita Electric Works(Nais) |
1810 |
AQY221R2SX |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
1811 |
AQY221R2SZ |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. |
Matsushita Electric Works(Nais) |
1812 |
ASI2N3866 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
1813 |
ASI2N4427 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
1814 |
ASIBLX65S |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
1815 |
ASIMM8006 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
1816 |
ASISD1006 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
1817 |
ASM5CVF857-28TR |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1818 |
ASM5CVF857-28TT |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1819 |
ASM5CVF857-28VR |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1820 |
ASM5CVF857-28VT |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1821 |
ASM5CVF857-40QR |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1822 |
ASM5CVF857-40QT |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1823 |
ASM5CVF857-56BR |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1824 |
ASM5CVF857-56BT |
60 MHz to 200 MHz, 2.5 V wide-range frequency clock driver |
Alliance Semiconductor |
1825 |
ASZ1015 |
Audio frequency PNP Ge switching transistor |
Felvezeto Katalogus 1966 |
1826 |
ASZ1016 |
Audio frequency PNP Ge switching transistor |
Felvezeto Katalogus 1966 |
1827 |
ASZ1017 |
Audio frequency PNP Ge switching transistor |
Felvezeto Katalogus 1966 |
1828 |
ASZ1018 |
Audio frequency PNP Ge switching transistor |
Felvezeto Katalogus 1966 |
1829 |
ASZ15 |
Audio frequency PNP Ge switching transistor - industrial design |
Felvezeto Katalogus 1966 |
1830 |
ASZ15 |
Low frequency, germanium power transistor PNP |
IPRS Baneasa |
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