| No. |
Part Name |
Description |
Manufacturer |
| 1801 |
BFT25 |
NPN 2 GHz wideband transistor |
Philips |
| 1802 |
BFT25A |
NPN 5 GHz wideband transistor |
NXP Semiconductors |
| 1803 |
BFT25A |
NPN 5 GHz wideband transistor |
Philips |
| 1804 |
BFT92 |
PNP 5 GHz wideband transistor |
NXP Semiconductors |
| 1805 |
BFT92 |
PNP 5 GHz wideband transistor |
Philips |
| 1806 |
BFT92W |
PNP 4 GHz wideband transistor |
NXP Semiconductors |
| 1807 |
BFT92W |
PNP 4 GHz wideband transistor |
Philips |
| 1808 |
BFT93 |
PNP 5 GHz wideband transistor |
NXP Semiconductors |
| 1809 |
BFT93 |
PNP 5 GHz wideband transistor |
Philips |
| 1810 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 1811 |
BFT93W |
PNP 4 GHz wideband transistor |
NXP Semiconductors |
| 1812 |
BFT93W |
PNP 4 GHz wideband transistor |
Philips |
| 1813 |
BFW92 |
Silicon NPN planar epitaxial transistor for RF amplifiers up to the GHz range |
VALVO |
| 1814 |
BFX89 |
Silicon NPN high frequency epitaxial planar transistor for professional applications up to GHz range |
AEG-TELEFUNKEN |
| 1815 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 1816 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
| 1817 |
BFY90 |
Silicon NPN epitaxial planar transistor for VHF and UHF applications up to GHz-range |
AEG-TELEFUNKEN |
| 1818 |
BFY90 |
Silicon NPN planar epitaxial transistor for RF amplifiers up to the GHz range |
VALVO |
| 1819 |
BGA3012 |
1 GHz 12 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 1820 |
BGA3015 |
1 GHz 15 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 1821 |
BGA3018 |
1 GHz 18 dB gain wideband amplifier MMIC |
NXP Semiconductors |
| 1822 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1823 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1824 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1825 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1826 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1827 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1828 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1829 |
BGB540LNA |
BGB540 as a 1.85 GHz Low Noise Amplifier |
Infineon |
| 1830 |
BGU7031 |
1 GHz wideband low-noise amplifier |
NXP Semiconductors |
| | | |
